CSMC provides DMOSFET process in a wide voltage range spreading 20V-700V. Trench has been successfully introduced into traditional VDMOS structure to significantly reduce cell size and consequently increase gross die number.

 

Based on successful experience of running High Voltage/ Heavy Current VDMOS in mass volume, CSMC moves forward to deliver 1200V planar NPT IGBT and FRD processes successfully. Meanwhile, CSMC is developing trench IGBT, which targets high voltage and high response speed. Comparing with traditional IGBT, trench IGBT has lower Rdson, lower power consumption, and higher efficiency.

 

Besides, CSMC has abundant experience in manufacturing trench TVS, as well as 3V~36V planar TVS in mass volume. It‘s characterized by higher ESD ability under same chip area and used in high-end circuit protection widely.