Power IC-0.18um
0.18um AB s-BCD G1 (7V-24V)

Overview
CSMC提供的0.18um Analog BCD体硅(非外延)工艺,拥有性能卓越的LDMOS/DECMOS表现以及精简的光刻层次,为DC-DC Convertor、电源管理IC、手机背光驱动、快充等应用提供了很好的解决方案。

Key Features
- Non-EPI process,cost effective mask layer,competitive Rdson and BVdss performance
- Foundry compatible 5V CMOS,NLDMOS & PLDMOS up to 24V
- Complementary Drain Extended CMOS (DECMOS) up to 40V operation
- Rich options included parasitic Zener/JFET/Schottky
- MIM Capacitor, High-Sheet Poly Resistor, E -fuse available
- PDK and industry standard CAD tools are supported
- Supporting Thick metal layer &Small pad opening for RDL

Application
-DC-DC Convertor
-PMICs
-LED lighting driver
-Backlight circuit applications
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0.18µm DB BCD G2S (7V-80V)

Overview
CSMC提供的0.18µm DB s-BCD G2S工艺平台提供了低导通电阻、高可靠性的LDMOS以及7V-80V宽工作电压器件可供选择。此外,平台还提供了BJT、Poly电阻、Zener、SBD等种类丰富的寄生器件,以及针对不同工作电压的ESD保护方案,为电源管理IC的设计提供了有竞争力的工艺方案。

Key Features
- Low Voltage 1.8V/5V CMOS
- High Voltage 7V-80V
- Switch and analog nLDMOS (7-80V), Full isolated nLDMOS (7-40V)
- Low Rdson pLDMOS (9-50V)
- Rich options: Zener &BJT&SBD
- 1.8V&5V standard cell library
- 5V FT e-Fuse
- 5V MTP

Application
- Motor Driver
- AC-DC/DC-DC Convertor
- PMICs
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0.18µm DB BCD G2S (80V-120V)

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0.18µm DB BCD G3 (7V-40V)

Overview
CSMC第三代0.18微米BCD工艺平台提供了低导通电阻、高可靠性的LDMOS以及精简的光刻层次,可覆盖7V-40V的宽工作电压范围。此外,平台还提供了BJT、Poly电阻、Zener、SBD等种类丰富的寄生器件,以及针对不同工作电压的ESD保护方案,为电源管理IC的设计提供了有竞争力的工艺方案。

Key Features
- Low Voltage 1.8V/5V CMOS
- High Voltage 23V/35V/45V DE-CMOS
- Switch and analog NLDMOS (7-40V), full isolated NLDMOS (7-24V)
- Low Rdson PLDMOS (7-40V)
- Rich options: Zener &BJT&SBD
- 1.8V&5V standard cell library
- 5V e-Fuse/FT e-Fuse
- 5V MTP (psub-iso)

Application
- Motor Driver
- AC-DC/DC-DC Convertor
- OVP
- PMICs

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