EDA

华润上华与主要的EDA供应商紧密合作,共同开发设计套件,以更好地满足客户各种各样的设计需求。

                                                                

参考流程
Synopsys
 
物理验证工具
Tech. Node Process Process Description CALIBRE ASSURA DIVA DRACULA HERCULES Argus
0.13µm Mixed-Signal/RF P-sub,1.2V/3.3V Including RF

         
0.16µm Logic  P-sub,1.8V/3.3V

         
Mixed-Signal/RF P-sub,1.8V/3.3V, including RF

 

 

 

 
0.18µm Logic P-sub, 1.8V/3.3V

         
Mixed-Signal/RF P-sub,1.8V/3.3V, including RF

 

 

 

0.35µm Flatcell P-sub,5V SPQM, 0.7µm *0.7µm flatcell cell, single poly, 4 metal

 

   
P-sub,3.3V/5V, 0.7µm *0.7µm flatcell, single poly,
single metal

 

   
P-sub, 3.5V/5V, 0.63µm *0.63µm flatcell, dual gate oxide

         
Mixed-Signal P-sub,3.3V/5V 

 

 

 

0.5FEOL
/0.35BEOL
Mixed-Signal 0.5FEOL/0.35BEOL 

 

 

   
0.5FEOL/0.35BEOL 1.8fF/um^2

 

 

   
Plain-poly, 3~5V

         
0.5µm Mixed-Signal Enhance Analog for 5V

         
P-Sub,5V, with PIP/High P2/LVt/Depletion

 

P-Sub,5V, with PIP/High P2/LVt/Depletion 1.8FF Cpip

 

 

   
HV P-sub,40V/25V process

   
P-sub,Deep Nwell 5V process

   
P-sub,5V/18V process      

*

   
BCD 0.5um 15V(VGS)/15V(VDS) DPTM BCDMOS Process

   
0.5um 5V(VGS)/15V(VDS) DPTM BCDMOS Process

   
0.5um 5V(VGS)/25V(VDS) DPTM BCDMOS Process

   
 0.5um 25V(VGS)/25V(VDS) DPTM BCDMOS Process

   
0.5um 5V(VGS)/40V(VDS) DPTM BCDMOS Process 

 

 

   
0.5µm FEOL 0.6µm BEOL       

   
P-sub,18V/20V thick_ox BCDMOS process

   
P-sub,5V/20V thin_Gox BCDMOS process

   
P-sub,5V/40V thin_Gox BCDMOS process 

   
P-sub,25V/40V thick_Gox BCDMOS process 

   
0.6µm Logic P-sub,5V,plain poly, before N-ROM      

#

   
P-sub,LV,plain poly, before N-ROM      

#

   
N-sub,5v,N-ROM before plain poly      

#

   
Mixed- Signal P-sub, 5V, PIP/High P2      

*

   
P-sub, 5V, PIP/High P2,LVt, Depletion      

*

   
HV N-sub, 5V-18V      

*

   
1.0µm  MGLV N-Sub,1.5-5V

   

   
N-Sub,3.0-5V

 

 

   
HV P-sub,5V/40V 

 

 

   
P-sub,5V/40V, 0.5µm backend, and thick Al2 is option

 

 

   
P-sub,5V/25V, 0.5µm backend, and thick Al2 is option(HV GOX 600A)

 

 

   
2.0µm 36V DN, Nitride Cap, 1M

         
DN, Nitride Cap, P-, P+, 1M

         
18V (5µm Tepi) DN,SiN Cap, 1M(5µm EPI)

         

√Provide DRC, LVS, RC xtraction.
*  Provide DRC, LVS only.
# Provide DRC only.

版权所有 2007. 华润上华科技有限公司.   法律申明