Power Discrete-Trench

0.45um 55-100V 6" N-ch DMOS
 0.4um 20-40V 6" N/P-ch DMOS
 0.35um 20-40V 6" N-ch DMOS

 Overview
      20~40V、55~100V是华润上华的标准Trench DMOS 工艺平台,主要应用于DC-DC SMPS电源管理,具有高密度和低通态电阻特性,并能够提供完整的设计服务。
Key Features
- High performance trench technology
- High Density
- Low Gate Charge
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
 Application
- E-bike, UPS, Lighting
- DC-DC, M/B
- Portable component 
 
----------------------------------------------------------------------------------------------------------------------------

 0.35um 20-30V 8" N/P-ch DMOS
 0.2um 20-40V 8" N-ch DMOS

 Overview
      20~40V是华润上华的标准Trench DMOS 工艺平台,主要应用于DC-DC SMPS电源管理,具有高密度和低通态电阻特性,并能够提供完整的设计服务。
 Key Features
- High performance trench technology
- High Density
- Low Gate Charge
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
 Application
- E-bike, UPS, Lighting
- DC-DC, M/B
- Portable component 
 
----------------------------------------------------------------------------------------------------------------------------
 1.0um 3.3-36V 6" TVS
6-inch Trench TVS technology is CSMC advanced single/double metal trench technology on 6-inch wafer.
 Key Features
- 8 layers, 1.0um trench CD for single metal
- 10 layers for double metal
- Low leakage, capacitance and Vf
 Application
- ESD protect 
 
----------------------------------------------------------------------------------------------------------------------------
 900-1200V NPT IGBT
  
 Overview
1200V Trench NPT IGBT采用CSMC专有的沟槽设计和先进的NPT非穿通技术,可以提供优越的导通和开关特性,可应用于电磁炉、马达控制和通用逆变器等。

 Key Features
- High performance trench NPT technology
- High Density
- Low conduction and switching loss
- Positive temperature coefficient 

 Application
- Induction Cooker
- Motor controls
- General purpose inverters
版权所有 2007. 华润上华科技有限公司.   法律申明