Mixed-Signal/RF-0.11um
 0.11 Ultra-low Leakage

 Overview

CSMC 0.11 ULL采用了铝互连技术,1P8M 架构,提供1.5V 内核器件及3.3V 输入输出器件,具备超低漏电特点,器件特征Ioff (pA/um)<0.5。

 Key Features 
- Single poly, eight-metal-layer process
- Al backend with low-K FSG material
- Device Ioff (typical) <0.5 pA/um

  Applications
- MCU
- IOT

------------------------------------------------------------------------------------------------------------------------------------------
0.11 ULL flash 

Overview

CSMC 0.11 ULL flash 工艺是基于0.11 ULL工艺嵌入flash, 逻辑器件与ULL兼容。提供超低功耗模拟IP。

Key Features
- Double poly, eight-metal-layer process
- Al backend with low-K FSG material
- Competitive flash macro cell size

 Application 
- MCU
- IOT

版权所有 2007. 华润上华科技有限公司.   法律申明  
苏ICP备05021479号    苏公网安备 32021402000784号